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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 48N60P IXFX 48N60P VDSS ID2 RDS(on) trr = = 600 V 48 A 135m 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight TL TSOLD Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 TC = 25 C Maximum Ratings 600 600 30 40 48 110 48 70 2.0 20 830 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns TO-264 (IXFK) G D S (TAB) PLUS247 (IXFX) (TAB) W C C C G = Gate S = Source D = Drain Tab = Drain Mounting torque (TO-264) TO-264 PLUS247 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 1.13/10 Nm/lb.in. 10 6 300 260 g g C C Features l l l Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C Characteristic Values Min. Typ. Max. 600 3.0 5.0 200 25 1000 135 V V nA A A m l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2006 IXYS All rights reserved DS99375E(02/06) IXFK 48N60P IXFX 48N60P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 35 53 8860 VGS = 0 V, VDS = 25 V, f = 1 MHz 850 60 30 VGS = 10 V, VDS = 0.5 ID25 RG = 2 (External) 25 85 22 150 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 50 S pF pF pF ns ns ns ns nC nC nC 0.15 C/W TO-264 and PLUS247 0.15 C/W TO-264 (IXFK) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCs VDS = 20 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 48 110 1.5 200 0.8 6.0 A A V ns C A PLUS 247TM (IXFX) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s VR = 100V Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFK 48N60P IXFX 48N60P Fig. 1. Output Characteristics @ 25C 50 45 40 35 VGS = 10V 8V 7V 120 100 VGS = 10V 8V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes I D - Amperes 30 25 20 15 10 5 0 0 1 2 3 4 5 6 5V 6V 80 60 40 7V 6V 20 5V 0 0 4 8 1 2 1 6 20 24 V D S - Volts Fig. 3. Output Characteristics @ 125C 50 45 40 VGS = 10V 7V 3.1 2.8 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature I D - Amperes 35 30 25 20 15 10 5 0 0 2 4 5V 6V R D S ( o n ) - Normalized 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 48A I D = 24A V D S - Volts 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 50 45 Fig. 5. RDS(on) Norm alized to 3.4 3.1 0.5 ID25 Value vs. ID VGS = 10V TJ = 125C R D S ( o n ) - Normalized 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0 20 40 60 80 40 35 I D - Amperes TJ = 25C 30 25 20 15 10 5 0 100 120 140 -50 -25 0 25 50 75 100 125 150 I D - Amperes (c) 2006 IXYS All rights reserved TC - Degrees Centigrade IXFK 48N60P IXFX 48N60P Fig. 7. Input Adm ittance 80 70 60 50 40 30 20 10 0 4 4.5 5 5.5 6 6.5 7 100 90 80 Fig. 8. Transconductance g f s - Siemens I D - Amperes 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 TJ = -40C 25C 125C TJ = 125C 25C -40C V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 160 140 120 10 9 8 7 VDS = 300V I D = 24A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 125C TJ = 25C 100 80 60 40 20 0 0.4 0.5 0.6 0.7 6 5 4 3 2 1 0 V S D - Volts 0.8 0.9 1 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 Q G - nanoCoulombs Fig. 13. Maxim um Transient Therm al Resistance 1.00 Fig. 11. Capacitance 100000 f = 1MHz Capacitance - picoFarads C iss 1000 C oss R( t h ) J C - C / W 10000 0.10 100 C rss 10 0 5 10 15 20 25 30 35 40 0.01 1 10 100 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. Pulse Width - milliseconds |
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